2309409-1

Heilind Number:AMP2309409-1
Manufacturer:TE Connectivity
Manufacturer Number:2309409-1
Datasheet:Product Specification
ECAD Model:
3D Model

Description:

DDR4 SODIMM 260P 5.2H STD

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Specifications

AttributeValue
Product Category:
Manufacturer:TE Connectivity
Manufacturer Part Number:TE Connectivity 2309409-1
Series:DDR4 DIMM
Housing Material:High Temperature Thermoplastic
Number of Rows:2
Mount Type:Board Mount
Contact Material:Copper Alloy
Pitch:.0197 in, .129 in, 3.3 mm, 5 mm
Voltage:1.2 V
Socket Type:Memory Card
Row Spacing:.322 in, 8.2 mm
Keying:Standard
Key Type:Offset Left
Latch Material:High Temperature Thermoplastic
Contact Amperage:.5 A
Number of Positions:260
Housing Color:Black
Profile:Low
Operating Temperature Range:-55 - 85 °C, -67 - 185 °F
Circuit Application:Power
Contact Mating Area Plating:Gold Flash
PCB Retention:With
PCB Contact Termination Area Plating:Gold Flash
PCB Retention Type:Solder Peg
Sealable:No
Connector and Contact Terminate To:Printed Circuit Board
Connector System:Cable-to-Board
Stack Height:.205 in, 5.2 mm
Ejector Type:Locking
PCB Mounting Style:Surface Mount
Ejector Location:Both Ends
Center Key:Offset Left
Center Post:Without
DRAM Type:Small Outline (SO)
Insertion Style:Cam-In
Socket Style:SO DIMM
Module Orientation:Right Angle
Retention Post Location:Both Ends
Material Flammability Standard:UL 94V-0
Part Aliases:2309409-1
SKU:AMP2309409-1

Detailed Description

Enhance your system's memory performance with our DDR4 SODIMM 260P 5.2H STD. This high-speed memory module, featuring a low profile design and gold flash plating, ensures reliable connectivity and efficient data transfer. With a voltage rating of 1.2V and operating temperature range from -55°C to 85°C, it offers durability and stability even in harsh environments. Designed for board mount assembly, this black housing component is RoHS compliant, making it an environmentally friendly choice for your electronic devices. Ideal for power circuit applications, it's the perfect solution for boosting your system's memory capabilities.